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ONSEMI - 2N5195G - Bipolar (BJT) Single Transistor, General Purpose, PNP, 80 V, 4 A, 40 W, TO-225, Through Hole
- Transistor Polarity: PNP
- Collector Emitter Voltage V(br)ceo: -80V
- Transition Frequency ft: 2MHz
- Power Dissipation Pd: 40W
- DC Collector Current: -4A
- DC Current Gain hFE: 80hFE
- Transistor Case Style: TO-225
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: No SVHC (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): -600mV
- Continuous Collector Current Ic Max: 4A
- Current Ic Continuous a Max: 4A
- Current Ic hFE: 1.5A
- Device Marking: 2N5195
- Full Power Rating Temperature: 25°C
- Gain Bandwidth ft Min: 2MHz
- Gain Bandwidth ft Typ: 2MHz
- Hfe Min: 20
- No. of Transistors: 1
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- Power Dissipation Ptot Max: 40W
- Voltage Vcbo: 80V
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