description
ONSEMI - 2N5551BU - Bipolar (BJT) Single Transistor, NPN, 160 V, 600 mA, 625 mW, TO-92, Through Hole
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 160V
- Transition Frequency ft: 300MHz
- Power Dissipation Pd: 625mW
- DC Collector Current: 600mA
- DC Current Gain hFE: 30hFE
- Transistor Case Style: TO-92
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)