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NEXPERIA - BC859C,215 - Bipolar (BJT) Single Transistor, PNP, 30 V, 100 mA, 250 mW, SOT-23, Surface Mount
- Transistor Polarity: PNP
- Collector Emitter Voltage V(br)ceo: -30V
- Transition Frequency ft: 100MHz
- Power Dissipation Pd: 250mW
- DC Collector Current: -100mA
- DC Current Gain hFE: 420hFE
- Transistor Case Style: SOT-23
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): -300mV
- Continuous Collector Current Ic Max: 100mA
- Current Ic Continuous a Max: 100mA
- Current Ic hFE: 2mA
- Device Marking: BC859C
- Gain Bandwidth ft Min: 100MHz
- Gain Bandwidth ft Typ: 100MHz
- Hfe Min: 420
- No. of Transistors: 1
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- Power Dissipation Ptot Max: 250mW
- SMD Marking: 4C
- Termination Type: Surface Mount Device
- Voltage Vcbo: 30V