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ONSEMI - BD681G. - Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 4 A, 40 W, TO-225AA, Through Hole
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 100V
- Transition Frequency ft: -
- Power Dissipation Pd: 40W
- DC Collector Current: 4A
- DC Current Gain hFE: 750hFE
- Transistor Case Style: TO-225AA
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: No SVHC (27-Jun-2018)
- Av Current Ic: 4A
- Collector Emitter Saturation Voltage Vce(on): 2.5V
- Continuous Collector Current Ic Max: 4A
- Current Ic Continuous a Max: 4A
- Current Ic hFE: 1.5A
- Full Power Rating Temperature: 25°C
- Hfe Min: 750
- No. of Transistors: 1
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Transistor Type: Darlington
- Voltage Vcbo: 100V