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ONSEMI - FCMT099N65S3 - Power MOSFET, N Channel, 650 V, 30 A, 0.087 ohm, PQFN, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 30A
- Drain Source Voltage Vds: 650V
- On Resistance Rds(on): 0.087ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 4.5V
- Power Dissipation Pd: 227W
- Transistor Case Style: PQFN
- No. of Pins: 4Pins
- Operating Temperature Max: 150°C
- Product Range: SuperFET III Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: Lead (27-Jun-2018)