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ONSEMI - FDN5618P - Power MOSFET, P Channel, 60 V, 1.25 A, 0.17 ohm, SuperSOT, Surface Mount
- Transistor Polarity: P Channel
- Continuous Drain Current Id: -1.25A
- Drain Source Voltage Vds: -60V
- On Resistance Rds(on): 0.17ohm
- Rds(on) Test Voltage Vgs: -10V
- Threshold Voltage Vgs: 20V
- Power Dissipation Pd: 500mW
- Transistor Case Style: SuperSOT
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Current Id Max: 1.2A
- Current Temperature: 25°C
- Device Marking: 618
- External Depth: 2.5mm
- External Length / Height: 1.12mm
- External Width: 3.05mm
- Full Power Rating Temperature: 25°C
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Pulse Current Idm: 10A
- SMD Marking: 618
- Tape Width: 8mm
- Voltage Vds: 60V
- Voltage Vds Typ: -60V
- Voltage Vgs Max: 20V
- Voltage Vgs Rds on Measurement: -10V
- Voltage Vgs th Max: -3V