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description
ONSEMI - FDS8858CZ - Dual MOSFET, Complementary N and P Channel, 30 V, 8.6 A, 0.017 ohm, SOIC, Surface Mount
- Transistor Polarity: N and P Channel
- Continuous Drain Current Id: 8.6A
- Drain Source Voltage Vds: 30V
- On Resistance Rds(on): 0.017ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 1.6V
- Power Dissipation Pd: 2W
- Transistor Case Style: SOIC
- No. of Pins: 8Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Cont Current Id N Channel 2: 8.6A
- Cont Current Id P Channel: 7.3A
- Current Id Max: 8.6A
- No. of Transistors: 2
- On State Resistance N Channel Max: 17mohm
- On State Resistance P Channel Max: 20.5mohm
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Pulse Current Idm N Channel 2: 20A
- Pulse Current Idm P Channel: 20A
- Termination Type: Surface Mount Device
- Voltage Vds Typ: 30V
- Voltage Vgs Max: 1.6V
- Voltage Vgs Rds on Measurement: 10V