FF225R12ME4BOSA1 IGBT, Module, N-Ch, 1.2kV, 320A INFINEON

INFINEON - FF225R12ME4BOSA1 - IGBT Module, Dual, 320 A, 1.85 V, 1.05 kW, 150 °C, Module

• Transistor Polarity: N Channel
• DC Collector Current: 320A
• Collector Emitter Saturation Voltage Vce(on): 1.85V
• Power Dissipation Pd: 1.05kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• No. of Pins: -
• Operating Temperature Max: 150°C
• Product Range: EconoDUAL 3 Series
• SVHC: No SVHC (27-Jun-2018)