FF2MR12W3M1HB11BPSA1 - Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 400 A, 1.2 kV, 0.00144 ohm, Module - INFINEON

INFINEONUGS :FF2MR12W3M1HB11BPSA1 Code de commande:3994942

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Prix ​​promotionnel€954,25

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En stock (9 unité)

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description

  • Channel Type: Dual N Channel
  • Continuous Drain Current Id: 400A
  • Drain Source On State Resistance: 0.00144ohm
  • Drain Source Voltage Vds: 1.2kV
  • Gate Source Threshold Voltage Max: 4.3V
  • MOSFET Module Configuration: Half Bridge
  • No. of Pins: 52Pins
  • On Resistance Rds(on): 0.00144ohm
  • Operating Temperature Max: 125°C
  • Power Dissipation: 20mW
  • Power Dissipation Pd: 20mW
  • Product Range: EasyPACK CoolsiC Series
  • Rds(on) Test Voltage: 18V
  • Transistor Case Style: Module
  • Transistor Polarity: Dual N Channel

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