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description
INFINEON - FF650R17IE4DB2BOSA1 - IGBT Module, Dual, 650 A, 2 V, 4.15 kW, 150 °C, Module
- Transistor Polarity: N Channel
- DC Collector Current: 650A
- Collector Emitter Saturation Voltage Vce(on): 2V
- Power Dissipation Pd: 4.15kW
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Transistor Case Style: Module
- No. of Pins: 10Pins
- Operating Temperature Max: 150°C
- Product Range: -
- SVHC: No SVHC (27-Jun-2018)
- Module Configuration: Dual
- Operating Temperature Min: -40°C
- Operating Temperature Range: -40°C to +150°C
- Power Dissipation Max: 4.15kW