IXA70I1200NA IGBT, MODULE, N-CH, 1.2KV, 100A IXYS SEMICONDUCTOR

IXYS SEMICONDUCTORUGS :IXA70I1200NA Code de commande:2782971

Prix:
Prix ​​promotionnel€37,38

incl. T.V.A. Calcul des frais d'expédition à la caisse

Stock:
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description

IXYS SEMICONDUCTOR - IXA70I1200NA - IGBT Module, Single, 100 A, 1.8 V, 350 W, 125 °C, SOT-227B

  • Transistor Polarity: N Channel
  • DC Collector Current: 100A
  • Collector Emitter Saturation Voltage Vce(on): 1.8V
  • Power Dissipation Pd: 350W
  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Transistor Case Style: SOT-227B
  • No. of Pins: 4Pins
  • Operating Temperature Max: 125°C
  • Product Range: -
  • SVHC: No SVHC (07-Jul-2017)

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