description
IXYS SEMICONDUCTOR - IXA70I1200NA - IGBT Module, Single, 100 A, 1.8 V, 350 W, 125 °C, SOT-227B
- Transistor Polarity: N Channel
- DC Collector Current: 100A
- Collector Emitter Saturation Voltage Vce(on): 1.8V
- Power Dissipation Pd: 350W
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Transistor Case Style: SOT-227B
- No. of Pins: 4Pins
- Operating Temperature Max: 125°C
- Product Range: -
- SVHC: No SVHC (07-Jul-2017)