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IXYS SEMICONDUCTOR - IXTP3N120 - Power MOSFET, N Channel, 1.2 kV, 3 A, 4.5 ohm, TO-220, Through Hole
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 3A
- Drain Source Voltage Vds: 1.2kV
- On Resistance Rds(on): 4.5ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 5V
- Power Dissipation Pd: 200W
- Transistor Case Style: TO-220
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: No SVHC (12-Jan-2017)
- Capacitance Ciss Typ: 1050pF
- Current Id Max: 3A
- Junction to Case Thermal Resistance A: 0.8°C/W
- N-channel Gate Charge: 39nC
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Reverse Recovery Time trr Max: 700ns
- Rise Time: 35ns
- Termination Type: Through Hole
- Voltage Vds Typ: 1.2kV
- Voltage Vgs Max: 20V
- Voltage Vgs Rds on Measurement: 10V