IXYN100N120C3H1 IGBT, N-Ch, 1.2kV, 134A, Sot-227B IXYS Semiconductor

IXYS SEMICONDUCTOR - IXYN100N120C3H1 - IGBT Module, Single, 134 A, 3.5 V, 690 W, 150 °C, SOT-227B

• Transistor Polarity: N Channel
• DC Collector Current: 134A
• Collector Emitter Saturation Voltage Vce(on): 3.5V
• Power Dissipation Pd: 690W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: SOT-227B
• No. of Pins: 4Pins
• Operating Temperature Max: 150°C
• Product Range: XPT GenX3 Series
• SVHC: No SVHC (12-Jan-2017)