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ONSEMI - MJD45H11-1G - Bipolar (BJT) Single Transistor, PNP, 80 V, 8 A, 20 W, TO-251, Through Hole
- Transistor Polarity: PNP
- Collector Emitter Voltage V(br)ceo: -80V
- Transition Frequency ft: 90MHz
- Power Dissipation Pd: 20W
- DC Collector Current: -8A
- DC Current Gain hFE: 40hFE
- Transistor Case Style: TO-251
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: Lead (27-Jun-2018)