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ONSEMI - MMBTA56LT1G - Bipolar (BJT) Single Transistor, General Purpose, PNP, 80 V, 500 mA, 225 mW, SOT-23, Surface Mount
- Transistor Polarity: PNP
- Collector Emitter Voltage V(br)ceo: -80V
- Transition Frequency ft: 50MHz
- Power Dissipation Pd: 225mW
- DC Collector Current: -500mA
- DC Current Gain hFE: 50hFE
- Transistor Case Style: SOT-23
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: MMBTxxxx Series
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): 250mV
- Continuous Collector Current Ic Max: 500mA
- Current Ic Continuous a Max: 500mA
- Current Ic hFE: 100mA
- Device Marking: MMBTA56
- Gain Bandwidth ft Min: 50MHz
- Gain Bandwidth ft Typ: 50MHz
- Hfe Min: 100
- No. of Transistors: 1
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Ptot Max: 225mW
- SMD Marking: 2GM
- Tape Width: 8mm
- Voltage Vcbo: 80V