Documents et téléchargements
description
ONSEMI - MMUN2212LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 22 kohm, 22 kohm, 1 (Ratio)
- Digital Transistor Polarity: Single NPN
- Collector Emitter Voltage V(br)ceo: 50V
- Continuous Collector Current Ic: 100mA
- Base Input Resistor R1: 22kohm
- Base-Emitter Resistor R2: 22kohm
- Resistor Ratio, R1 / R2: 1(Ratio)
- RF Transistor Case: SOT-23
- No. of Pins: 3 Pin
- Product Range: -
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): -250mV
- Continuous Collector Current Ic Max: 100mA
- Current Ic Continuous a Max: 100mA
- Current Ic hFE: 5mA
- DC Collector Current: 100mA
- DC Current Gain hFE: 100hFE
- Hfe Min: 60
- No. of Pins: 3Pins
- No. of Transistors: 1
- Operating Temperature Max: 150°C
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Pin Configuration: 1
- Power Dissipation Pd: 246mW
- Power Dissipation Ptot Max: 200mW
- Resistance R1: 22kohm
- Resistance R2: 22kohm
- SMD Marking: A8B
- Transistor Case Style: SOT-23
- Transistor Type: Bias Resistor (BRT)
- Voltage Vcbo: 50V