MRF101BN RF FET Transistor, 133V, 182W, TO-220 NXP

NXP - MRF101BN - RF FET Transistor, 133 V, 182 W, 1.8 MHz, 250 MHz, TO-220

• Drain Source Voltage Vds: 133V
• Continuous Drain Current Id: -
• Power Dissipation Pd: 182W
• Operating Frequency Min: 1.8MHz
• Operating Frequency Max: 250MHz
• RF Transistor Case: TO-220
• No. of Pins: 3Pins
• Operating Temperature Max: 175°C
• Product Range: MRF101AN
• MSL: -
• SVHC: No SVHC (15-Jan-2019)