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MUN5331DW1T1G - Bipolar Pre-Biased / Digital Transistor, NPN and PNP Complement, 50 V, 50 V, 100 mA, 2.2 kohm - ONSEMI
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MUN5331DW1T1G - Bipolar Pre-Biased / Digital Transistor, NPN and PNP Complement, 50 V, 50 V, 100 mA, 2.2 kohm - ONSEMI

MUN5331DW1T1G - Bipolar Pre-Biased / Digital Transistor, NPN and PNP Complement, 50 V, 50 V, 100 mA, 2.2 kohm - ONSEMI

ONSEMIUGS :MUN5331DW1T1G Code de commande:3003740
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€0,61

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description

  • Base Emitter Resistor R2: 2.2kohm
  • Base Input Resistor R1: 2.2kohm
  • Collector Emitter Voltage Max NPN: 50V
  • Collector Emitter Voltage Max PNP: 50V
  • Collector Emitter Voltage V(br)ceo: 50V
  • Continuous Collector Current: 100mA
  • Continuous Collector Current Ic: 100mA
  • DC Current Gain hFE Min: 8hFE
  • Digital Transistor Polarity: NPN and PNP Complement
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 6 Pin
  • Operating Temperature Max: 150°C
  • Power Dissipation: 385mW
  • Product Range: -
  • Qualification: -
  • RF Transistor Case: SOT-363
  • Resistor Ratio, R1 / R2: -
  • Transistor Case Style: SOT-363
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: NPN and PNP Complement

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