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NEXPERIA - PBSS8110T,215 - Bipolar (BJT) Single Transistor, NPN, 100 V, 1 A, 300 mW, SOT-23, Surface Mount
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 100V
- Transition Frequency ft: 100MHz
- Power Dissipation Pd: 300mW
- DC Collector Current: 1A
- DC Current Gain hFE: 150hFE
- Transistor Case Style: SOT-23
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): 120V
- Continuous Collector Current Ic Max: 1A
- Current Ic @ Vce Sat: 500A
- Current Ic Continuous a Max: 1A
- Current Ic hFE: 1mA
- Full Power Rating Temperature: 25°C
- Gain Bandwidth ft Min: 100MHz
- Gain Bandwidth ft Typ: 100MHz
- Hfe Min: 80
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- Power Dissipation Ptot Max: 480mW
- Voltage Vcbo: 120V