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description
ROHM - QS6M4TR - Dual MOSFET, Complementary N and P Channel, 20 V, 1.5 A, 0.36 ohm, TSMT, Surface Mount
- Transistor Polarity: N and P Channel
- Continuous Drain Current Id: 1.5A
- Drain Source Voltage Vds: 20V
- On Resistance Rds(on): 0.36ohm
- Rds(on) Test Voltage Vgs: 4.5V
- Threshold Voltage Vgs: 1.5V
- Power Dissipation Pd: 900mW
- Transistor Case Style: TSMT
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
- Continuous Drain Current Id, N Channel: -1.5A
- Continuous Drain Current Id, P Channel: -1.5A
- Drain Source Voltage Vds, N Channel: 30V
- Drain Source Voltage Vds, P Channel: -20V
- On Resistance Rds(on), N Channel: 0.17ohm
- On Resistance Rds(on), P Channel: 0.155ohm
- Pulse Current Idm: 6A
- Termination Type: Surface Mount Device
- Voltage Vds Typ: 30V
- Voltage Vgs Rds on Measurement: 2.5V
- Voltage Vgs th Max: 500mV
- Voltage Vgs th Min: 1.5V