SKM200GB12T4 IGBT MODULE, DUAL N CH, 1.2KV, 313A SEMIKRON

SEMIKRON - SKM200GB12T4 - IGBT Module, Half Bridge, 313 A, 1.8 V, 175 °C, Module

• Transistor Polarity: Dual N Channel
• DC Collector Current: 313A
• Collector Emitter Saturation Voltage Vce(on): 1.8V
• Power Dissipation Pd: -
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• No. of Pins: 7Pins
• Operating Temperature Max: 175°C
• Product Range: -
• SVHC: No SVHC (15-Jun-2015)