Omschrijving
ONSEMI - AFGB40T65SQDN - IGBT, 80 A, 1.6 V, 238 W, 650 V, TO-263 (D2PAK), 3 Pins
- DC Collector Current: 80A
- Collector Emitter Saturation Voltage Vce(on): 1.6V
- Power Dissipation Pd: 238W
- Collector Emitter Voltage V(br)ceo: 650V
- Transistor Case Style: TO-263
- No. of Pins: 3Pins
- Operating Temperature Max: 175°C
- Product Range: -
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
