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ONSEMI - BC856BWT1G - Bipolar (BJT) Single Transistor, PNP, 65 V, 100 mA, 150 mW, SC-70, Surface Mount
- Transistor Polarity: PNP
- Collector Emitter Voltage V(br)ceo: -65V
- Transition Frequency ft: 100MHz
- Power Dissipation Pd: 150mW
- DC Collector Current: -100mA
- DC Current Gain hFE: 150hFE
- Transistor Case Style: SC-70
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)