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ONSEMI - BDV64BG - Bipolar (BJT) Single Transistor, Darlington, PNP, 100 V, 10 A, 125 W, TO-247, Through Hole
- Transistor Polarity: PNP
- Collector Emitter Voltage V(br)ceo: -100V
- Transition Frequency ft: -
- Power Dissipation Pd: 125W
- DC Collector Current: -10A
- DC Current Gain hFE: 1000hFE
- Transistor Case Style: SOT-93
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: No SVHC (27-Jun-2018)
- Av Current Ic: 12A
- Collector Emitter Saturation Voltage Vce(on): -2V
- Continuous Collector Current Ic Max: 12A
- Current Ic Continuous a Max: 12A
- Current Ic hFE: 5A
- Full Power Rating Temperature: 25°C
- Gain Bandwidth ft Typ: 100kHz
- Hfe Min: 1000
- No. of Transistors: 1
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- Power Dissipation Ptot Max: 125W
- Transistor Type: Darlington
- Voltage Vcbo: 100V
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