Omschrijving
ONSEMI - FCMT299N60 - Power MOSFET, N Channel, 600 V, 12 A, 0.25 ohm, PQFN, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 12A
- Drain Source Voltage Vds: 600V
- On Resistance Rds(on): 0.25ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 3.5V
- Power Dissipation Pd: 125W
- Transistor Case Style: PQFN
- No. of Pins: 4Pins
- Operating Temperature Max: 150°C
- Product Range: SuperFET II Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2019)