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ONSEMI - FDC658AP - Power MOSFET, P Channel, 30 V, 4 A, 0.044 ohm, SuperSOT, Surface Mount
- Transistor Polarity: P Channel
- Continuous Drain Current Id: -4A
- Drain Source Voltage Vds: -30V
- On Resistance Rds(on): 0.044ohm
- Rds(on) Test Voltage Vgs: -10V
- Threshold Voltage Vgs: -1.8V
- Power Dissipation Pd: 1.6W
- Transistor Case Style: SuperSOT
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Operating Temperature Min: -55°C