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ONSEMI - HGT1S10N120BNST - IGBT, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 Pins
- DC Collector Current: 35A
- Collector Emitter Saturation Voltage Vce(on): 2.45V
- Power Dissipation Pd: 298W
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Transistor Case Style: TO-263AB
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: Lead (27-Jun-2018)