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IXYS SEMICONDUCTOR - IXYN82N120C3H1 - IGBT Module, Single, 105 A, 3.2 V, 500 W, 150 °C, SOT-227B
- Transistor Polarity: N Channel
- DC Collector Current: 105A
- Collector Emitter Saturation Voltage Vce(on): 3.2V
- Power Dissipation Pd: 500W
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Transistor Case Style: SOT-227B
- No. of Pins: 4Pins
- Operating Temperature Max: 150°C
- Product Range: XPT GenX3 Series
- SVHC: No SVHC (12-Jan-2017)