MJD112G Transistor, NPN, D-Pak ONSEMI

ONSEMISKU:MJD112G Bestelcode:1459084

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ONSEMI - MJD112G - Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 2 A, 1.75 W, TO-252 (DPAK), Surface Mount

  • Transistor Polarity: NPN
  • Collector Emitter Voltage V(br)ceo: 100V
  • Transition Frequency ft: 25MHz
  • Power Dissipation Pd: 1.75W
  • DC Collector Current: 2A
  • DC Current Gain hFE: 12000hFE
  • Transistor Case Style: TO-252
  • No. of Pins: 3Pins
  • Operating Temperature Max: 150°C
  • Product Range: -
  • Automotive Qualification Standard: AEC-Q101
  • MSL: MSL 1 - Unlimited
  • SVHC: Lead (27-Jun-2018)
  • Collector Emitter Saturation Voltage Vce(on): 2V
  • Complementary Device: MJD117G
  • Continuous Collector Current Ic Max: 2A
  • Current Ic Continuous a Max: 4A
  • Current Ic hFE: 2A
  • Gain Bandwidth ft Typ: 25MHz
  • Hfe Min: 200
  • Operating Temperature Min: -65°C
  • Operating Temperature Range: -65°C to +150°C
  • Peak Current Icm: 4A
  • Power Dissipation Ptot Max: 20W
  • Termination Type: Surface Mount Device
  • Voltage Vcbo: 100V

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