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ONSEMI - NTJD4105CT1G - Dual MOSFET, Complementary N and P Channel, 20 V, 630 mA, 0.29 ohm, SOT-363, Surface Mount
- Transistor Polarity: N and P Channel
- Continuous Drain Current Id: 630mA
- Drain Source Voltage Vds: 20V
- On Resistance Rds(on): 0.29ohm
- Rds(on) Test Voltage Vgs: 4.5V
- Threshold Voltage Vgs: 920mV
- Power Dissipation Pd: 270mW
- Transistor Case Style: SOT-363
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Operating Temperature Min: -55°C