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NEXPERIA - PEMD13,115 - Bipolar Pre-Biased / Digital Transistor, BRT, NPN and PNP Complement, 50 V, 100 mA, 4.7 kohm
- Digital Transistor Polarity: NPN and PNP Complement
- Collector Emitter Voltage V(br)ceo: 50V
- Continuous Collector Current Ic: 100mA
- Base Input Resistor R1: 4.7kohm
- Base-Emitter Resistor R2: 47kohm
- Resistor Ratio, R1 / R2: 10(Ratio)
- RF Transistor Case: SOT-666
- No. of Pins: 6 Pin
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
- Collector Emitter Saturation Voltage Vce(on): 100mV
- Current Ic Continuous a Max: 5mA
- DC Collector Current: 100mA
- DC Current Gain hFE: 100hFE
- Hfe Min: 100
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- Power Dissipation Pd: 300mW
- Termination Type: Surface Mount Device
- Transistor Case Style: SOT-666
- Transistor Polarity: NPN, PNP
- Transistor Type: General Purpose