SI1922EDH-T1-GE3 MOSFET, NN Ch, 20V, 1.3a, SOT363 Vishay

VISHAYSKU:SI1922EDH-T1-GE3 Bestelcode:2056714

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Omschrijving

VISHAY - SI1922EDH-T1-GE3 - Dual MOSFET, N Channel, 20 V, 1.3 A, 0.165 ohm, SOT-363, Surface Mount

  • Transistor Polarity: Dual N Channel
  • Continuous Drain Current Id: 1.3A
  • Drain Source Voltage Vds: 20V
  • On Resistance Rds(on): 0.165ohm
  • Rds(on) Test Voltage Vgs: 4.5V
  • Threshold Voltage Vgs: 400mV
  • Power Dissipation Pd: 1.25W
  • Transistor Case Style: SOT-363
  • No. of Pins: 6Pins
  • Operating Temperature Max: 150°C
  • Product Range: -
  • Automotive Qualification Standard: -
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (15-Jun-2015)
  • Continuous Drain Current Id, N Channel: 1.3A
  • Drain Source Voltage Vds, N Channel: 20V
  • Module Configuration: Dual
  • On Resistance Rds(on), N Channel: 0.165ohm
  • Operating Temperature Min: -55°C
  • Operating Temperature Range: -55°C to +150°C

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