Documenten en downloads
Omschrijving
VISHAY - SIHP30N60E-GE3 - Power MOSFET, N Channel, 600 V, 29 A, 0.104 ohm, TO-220AB, Through Hole
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 29A
- Drain Source Voltage Vds: 600V
- On Resistance Rds(on): 0.104ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 2V
- Power Dissipation Pd: 250W
- Transistor Case Style: TO-220AB
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- Operating Temperature Min: -55°C