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SEMIKRON - SKM200GB125D - IGBT Module, Half Bridge, 200 A, 3.3 V, 150 °C, Module
- Transistor Polarity: Dual N Channel
- DC Collector Current: 200A
- Collector Emitter Saturation Voltage Vce(on): 3.3V
- Power Dissipation Pd: -
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Transistor Case Style: Module
- No. of Pins: 7Pins
- Operating Temperature Max: 150°C
- Product Range: -
- SVHC: No SVHC (15-Jun-2015)