Omschrijving
VISHAY - SQ2364EES-T1_GE3 - Power MOSFET, N Channel, 60 V, 2 A, 0.19 ohm, SOT-23, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 2A
- Drain Source Voltage Vds: 60V
- On Resistance Rds(on): 0.19ohm
- Rds(on) Test Voltage Vgs: 4.5V
- Threshold Voltage Vgs: 600mV
- Power Dissipation Pd: 3W
- Transistor Case Style: SOT-23
- No. of Pins: 3Pins
- Operating Temperature Max: 175°C
- Product Range: TrenchFET Series
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)