BA159G R0 Diode, Fast, 1A Taiwan Semiconductor

TAIWAN SEMICONDUCTORUGS :BA159G Code de commande:4084594

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description

TAIWAN SEMICONDUCTOR - BA159G - Standard Recovery Diode, 1 kV, 1 A, Single, 1.2 V, 250 ns, 30 A

  • Repetitive Reverse Voltage Vrrm Max: 1kV
  • Forward Current If(AV): 1A
  • Diode Configuration: Single
  • Forward Voltage VF Max: 1.2V
  • Reverse Recovery Time trr Max: 250ns
  • Forward Surge Current Ifsm Max: 30A
  • Operating Temperature Max: 150°C
  • Diode Case Style: DO-41 (DO-204AL)
  • No. of Pins: 2Pins
  • Product Range: BA159 Series
  • Automotive Qualification Standard: -
  • SVHC: No SVHC (15-Jan-2019)
  • Approval Bodies: UL
  • Case Temperature Tc @ If: 25°C
  • Current If @ Vf: 1A
  • Current Ifrm: 1A
  • Current Ifsm: 30A
  • Current Ir Max: 1A
  • Device Marking: BA159G
  • Diode Type: Fast Recovery
  • External Depth: 2.7mm
  • External Diameter: 2.7mm
  • External Length / Height: 5.2mm
  • External Width: 2.7mm
  • Forward Current If Max: 1mA
  • Forward Voltage: 1.2V
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -65°C
  • No. of Pins: 2 Pin
  • Operating Temperature Min: -65°C
  • Operating Temperature Range: -65°C to +150°C
  • Termination Type: Axial Leaded
  • Weight: 0.0003kg

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