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description
IXYS SEMICONDUCTOR - IXFN55N50 - Power MOSFET, HiPerFET, N Channel, 500 V, 55 A, 0.08 ohm, ISOTOP, Module
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 55A
- Drain Source Voltage Vds: 500V
- On Resistance Rds(on): 0.08ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 4.5V
- Power Dissipation Pd: 600W
- Transistor Case Style: ISOTOP
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: No SVHC (12-Jan-2017)
- Current Id Max: 55A
- Current Temperature: 25°C
- Full Power Rating Temperature: 25°C
- Isolation Voltage: 2.5kV
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- No. of Transistors: 1
- On State Resistance Max: 80mohm
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Pulse Current Idm: 220A
- Repetitive Avalanche Energy Max: 60mJ
- Termination Type: Screw
- Voltage Vds Typ: 500V
- Voltage Vgs Max: 20V
- Voltage Vgs Rds on Measurement: 10V
- Voltage Vgs th Max: 4.5V
- Weight: 0.046kg