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ONSEMI - MJD50G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 400 V, 1 A, 1.56 W, TO-252 (DPAK)
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 400V
- Transition Frequency ft: 10MHz
- Power Dissipation Pd: 1.56W
- DC Collector Current: 1A
- DC Current Gain hFE: 30hFE
- Transistor Case Style: TO-252
- No. of Pins: 4Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: Lead (27-Jun-2018)
- Application Code: PGP
- Collector Emitter Saturation Voltage Vce(on): 1V
- Continuous Collector Current Ic Max: 1A
- Current Ic Continuous a Max: 1A
- Current Ic hFE: 200mA
- External Depth: 10.28mm
- External Length / Height: 2.38mm
- External Width: 6.73mm
- Full Power Rating Temperature: 25°C
- Gain Bandwidth ft Min: 10MHz
- Gain Bandwidth ft Typ: 10MHz
- Hfe Min: 25
- No. of Transistors: 1
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- Power Dissipation Ptot Max: 15W
- SMD Marking: MJD50
- Voltage Vcbo: 500V