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ONSEMI - MJE5852G - Bipolar (BJT) Single Transistor, PNP, 400 V, 8 A, 80 W, TO-220AB, Through Hole
- Transistor Polarity: PNP
- Collector Emitter Voltage V(br)ceo: 400V
- Transition Frequency ft: -
- Power Dissipation Pd: 80W
- DC Collector Current: 8A
- DC Current Gain hFE: 15hFE
- Transistor Case Style: TO-220AB
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: MJxxxx Series
- Automotive Qualification Standard: -
- MSL: -
- SVHC: Lead (27-Jun-2018)
- Application Code: PHVS
- Av Current Ic: 8A
- Collector Emitter Saturation Voltage Vce(on): 2V
- Continuous Collector Current Ic Max: 8A
- Current Ib: 4A
- Current Ic @ Vce Sat: 4A
- Current Ic Continuous a Max: 8A
- Current Ic hFE: 5mA
- Device Marking: MJE5852
- External Depth: 4.82mm
- External Length / Height: 30.02mm
- External Width: 10.28mm
- Fall Time @ Ic: 0.5µs
- Full Power Rating Temperature: 25°C
- Hfe Min: 5
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -65°C
- Junction to Case Thermal Resistance A: 1.25°C/W
- No. of Transistors: 1
- Operating Temperature Min: -65°C
- Power Dissipation Ptot Max: 80W
- Voltage Vces: 450V