Documents et téléchargements
description
ONSEMI - MMBT5550LT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 140 V, 600 mA, 225 mW, SOT-23, Surface Mount
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 140V
- Transition Frequency ft: -
- Power Dissipation Pd: 225mW
- DC Collector Current: 600mA
- DC Current Gain hFE: 250hFE
- Transistor Case Style: SOT-23
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): 60V
- Current Ic Continuous a Max: 60mA
- Hfe Min: 250
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Termination Type: Surface Mount Device
- Transistor Type: Power Bipolar