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ONSEMI - MMBT5551LT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 160 V, 600 mA, 225 mW, SOT-23, Surface Mount
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 160V
- Transition Frequency ft: -
- Power Dissipation Pd: 225mW
- DC Collector Current: 600mA
- DC Current Gain hFE: 30hFE
- Transistor Case Style: SOT-23
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: AEC-Q101
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Operating Temperature Min: -55°C