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VISHAY - SI3590DV-T1-GE3 - Dual MOSFET, Complementary N and P Channel, 30 V, 2.5 A, 0.062 ohm, TSOP, Surface Mount
- Transistor Polarity: N and P Channel
- Continuous Drain Current Id: 2.5A
- Drain Source Voltage Vds: 30V
- On Resistance Rds(on): 0.062ohm
- Rds(on) Test Voltage Vgs: 4.5V
- Threshold Voltage Vgs: 1.5V
- Power Dissipation Pd: 830mW
- Transistor Case Style: TSOP
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jun-2015)
- Continuous Drain Current Id, N Channel: 3A
- Continuous Drain Current Id, P Channel: -2A
- Drain Source Voltage Vds, N Channel: 30V
- Drain Source Voltage Vds, P Channel: -30V
- Module Configuration: Dual
- On Resistance Rds(on), N Channel: 0.062ohm
- On Resistance Rds(on), P Channel: 0.135ohm
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
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