SI3590DV-T1-GE3 MOSFET, NP Ch, 30V, W Diode, TSOP6 Vishay

VISHAYUGS :SI3590DV-T1-GE3 Code de commande:2056715

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description

VISHAY - SI3590DV-T1-GE3 - Dual MOSFET, Complementary N and P Channel, 30 V, 2.5 A, 0.062 ohm, TSOP, Surface Mount

  • Transistor Polarity: N and P Channel
  • Continuous Drain Current Id: 2.5A
  • Drain Source Voltage Vds: 30V
  • On Resistance Rds(on): 0.062ohm
  • Rds(on) Test Voltage Vgs: 4.5V
  • Threshold Voltage Vgs: 1.5V
  • Power Dissipation Pd: 830mW
  • Transistor Case Style: TSOP
  • No. of Pins: 6Pins
  • Operating Temperature Max: 150°C
  • Product Range: -
  • Automotive Qualification Standard: -
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (15-Jun-2015)
  • Continuous Drain Current Id, N Channel: 3A
  • Continuous Drain Current Id, P Channel: -2A
  • Drain Source Voltage Vds, N Channel: 30V
  • Drain Source Voltage Vds, P Channel: -30V
  • Module Configuration: Dual
  • On Resistance Rds(on), N Channel: 0.062ohm
  • On Resistance Rds(on), P Channel: 0.135ohm
  • Operating Temperature Min: -55°C
  • Operating Temperature Range: -55°C to +150°C

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