SIR662DP-T1-GE3 MOSFET, N Ch, DIO, 60V,100A, PPK SO8 Vishay

VISHAYUGS :SIR662DP-T1-GE3 Code de commande:2056694

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description

VISHAY - SIR662DP-T1-GE3 - Power MOSFET, N Channel, 60 V, 100 A, 0.0022 ohm, PowerPAK SO, Surface Mount

  • Transistor Polarity: N Channel
  • Continuous Drain Current Id: 100A
  • Drain Source Voltage Vds: 60V
  • On Resistance Rds(on): 0.0022ohm
  • Rds(on) Test Voltage Vgs: 10V
  • Threshold Voltage Vgs: 1V
  • Power Dissipation Pd: 104W
  • Transistor Case Style: PowerPAK SO
  • No. of Pins: 8Pins
  • Operating Temperature Max: 150°C
  • Product Range: -
  • Automotive Qualification Standard: -
  • MSL: MSL 1 - Unlimited
  • Operating Temperature Min: -55°C
  • Operating Temperature Range: -55°C to +150°C

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