SIS4608LDN-T1-GE3 - Power MOSFET, N Channel, 60 V, 36.2 A, 0.0094 ohm, PowerPAK 1212, Surface Mount - VISHAY

VISHAYUGS :SIS4608LDN-T1-GE3 Code de commande:4014726

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description

  • Automotive Qualification Standard: -
  • Channel Type: N Channel
  • Continuous Drain Current Id: 36.2A
  • Drain Source On State Resistance: 0.0094ohm
  • Drain Source Voltage Vds: 60V
  • Gate Source Threshold Voltage Max: 3V
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 8Pins
  • On Resistance Rds(on): 0.0094ohm
  • Operating Temperature Max: 150°C
  • Power Dissipation: 27.1W
  • Power Dissipation Pd: 27.1W
  • Product Range: TrenchFET Gen IV Series
  • Qualification: -
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: PowerPAK 1212
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel

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