SIZF5302DT-T1-RE3 - Dual MOSFET, N Channel, 30 V, 30 V, 100 A, 100 A, 0.0027 ohm - VISHAY

VISHAYUGS :SIZF5302DT-T1-RE3 Code de commande:4006714

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Prix ​​promotionnel€2,92

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En stock (13809 unité)

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description

  • Automotive Qualification Standard: -
  • Channel Type: N Channel
  • Continuous Drain Current Id: 100A
  • Continuous Drain Current Id N Channel: 100A
  • Continuous Drain Current Id P Channel: 100A
  • Drain Source On State Resistance N Channel: 0.0027ohm
  • Drain Source On State Resistance P Channel: 0.0027ohm
  • Drain Source Voltage Vds: 30V
  • Drain Source Voltage Vds N Channel: 30V
  • Drain Source Voltage Vds P Channel: 30V
  • Gate Source Threshold Voltage Max: 2V
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 12Pins
  • On Resistance Rds(on): 0.0027ohm
  • Operating Temperature Max: 150°C
  • Power Dissipation N Channel: 48.1W
  • Power Dissipation P Channel: 48.1W
  • Power Dissipation Pd: 48.1W
  • Product Range: TrenchFET Gen V Series
  • Qualification: -
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: PowerPAIR
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: Dual N Channel

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