SQ4282EY-T1_GE3 - Dual MOSFET, N Channel, 30 V, 30 V, 8 A, 8 A, 0.01 ohm - VISHAY

VISHAYUGS :SQ4282EY-T1_GE3 Code de commande:3929246

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Prix ​​promotionnel€2,66

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Stock:
En stock (12 unité)

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description

  • Automotive Qualification Standard: AEC-Q101
  • Channel Type: N Channel
  • Continuous Drain Current Id: 8A
  • Continuous Drain Current Id N Channel: 8A
  • Continuous Drain Current Id P Channel: 8A
  • Drain Source On State Resistance N Channel: 0.01ohm
  • Drain Source On State Resistance P Channel: 0.01ohm
  • Drain Source Voltage Vds: 30V
  • Drain Source Voltage Vds N Channel: 30V
  • Drain Source Voltage Vds P Channel: 30V
  • Gate Source Threshold Voltage Max: 2V
  • No. of Pins: 8Pins
  • On Resistance Rds(on): 0.01ohm
  • Operating Temperature Max: 175°C
  • Power Dissipation N Channel: 3.9W
  • Power Dissipation P Channel: 3.9W
  • Power Dissipation Pd: 3.9W
  • Product Range: TrenchFET Series
  • Qualification: AEC-Q101
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: SOIC
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel

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