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ONSEMI - MJE5731AG - Bipolar (BJT) Single Transistor, PNP, 375 V, 1 A, 2 W, TO-220, Through Hole
- Transistor Polarity: PNP
- Collector Emitter Voltage V(br)ceo: 375V
- Transition Frequency ft: 10MHz
- Power Dissipation Pd: 2W
- DC Collector Current: 1A
- DC Current Gain hFE: 10hFE
- Transistor Case Style: TO-220
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: MJxxxx Series
- Automotive Qualification Standard: -
- MSL: -
- SVHC: Lead (27-Jun-2018)
- Alternate Case Style: SOT-78B
- Application Code: PHVS
- Av Current Ic: 1A
- Collector Emitter Saturation Voltage Vce(on): 1V
- Continuous Collector Current Ic Max: 1A
- Current Ic @ Vce Sat: 1A
- Current Ic Continuous a Max: 1A
- Current Ic hFE: 1mA
- Device Marking: MJE5731A
- Full Power Rating Temperature: 25°C
- Gain Bandwidth ft Min: 10MHz
- Gain Bandwidth ft Typ: 10MHz
- Hfe Min: 10
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -65°C
- No. of Transistors: 1
- Operating Temperature Min: -65°C
- Power Dissipation Ptot Max: 2W
- Voltage Vcbo: 375V
- Voltage Vce Sat @ Ic NPN Max: 1V
- Voltage Vceo Max: 375V
- Voltage Vces: 375V